Plasma Enhanced Chemical Vapor Deposition (PECVD) system for coatings from the gas phase with activation of working gases by induction discharge plasma (ICP)

Features:

• Excellent adhesion of the coatings

• Higher deposition rate in comparison with PVD methods

• Low temperature processes without decreasing film parameters

• Films conformity

• Possibility to make coatings on the substrates of complicated shapes with high level of uniformity

• Fully automatic system of ICP impedance matching

• Bigger maintenance intervals (self-cleaning function)

• A wide range of options which help to increase vacuum system capabilities and implement variety of tasks with ICP CVD method of deposition

Additional options:

• Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber

• Scrubber for the exhaust cleaning

• Gas cabinets for the toxic, flammable and explosive gases

• Thermostat

• Systems of heating the walls of technological vacuum chamber and pipes

• Additional external pumping circuit for achieving an extremely clean deposition process

• Additional gas lines

• Nitrogen (N2) chamber filling system

Technical data:

Additional features:

• Liquid reactive chemicals supplying System

• Electrostatic clamping of the substrate

• Substrate holder design with RF bias, which allows the energy spectrum of the plasma to be adjusted.

• Optical emission spectroscopy

• Integration into clean room

• Substrate thermal stabilization system with helium (He) supply under the bottom of the substrate