System for plasma enhanced chemical vapor deposition processes with Capacitively Coupled Plasma (CCP)

Features:

• Excellent adhesion of the coatings

• Higher deposition rate

• Low temperature processes without decreasing film parameters

• Possibility to deposit coatings on the substrates of complicated shapes

• Fully automatic system of CCP impedance matching

• Bigger maintenance intervals (self-cleaning function)

• A wide range of options which help to increase vacuum system capabilities and implement variety of tasks with PECVD method of deposition

Additional options:

• Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber

• Scrubber for the exhaust cleaning

• Gas cabinets for the toxic, flammable and explosive gases

• Thermostat

• Additional external pumping circuit for achieving an extremely clean deposition process

• Additional gas lines

• Nitrogen (N2) chamber filling system

• System of supplying liquid reactive chemicals

Technical data:

Additional features:

• Electrostatic fixation of substrates

• System of cryogenic cooling of the substrate

• System of the substrate thermostabilizing with helium (He) supply to the bottom side of the substrate

• Substrate holder design with RF bias, which allows to adjust the energy spectrum of the plasma

• Single wave or broadband optical monitoring system

• Optical emission spectroscopy

• Laser interferometry

• Installation into clean room