System for plasma chemical and reactive ion etching with induction discharge plasma activation (ICP)

Features:

• The etching process is a dry process

• Absence of the substrate damages while simultaneous high-density plasma

• High selectiveness of the etching process

• High etching rate

• Low temperature of the process

• Possibility to etch substrates with complicated shape

• Possibility to implement deep plasma etching

• A wide range of etching materials

• Fully automatic system of ICP impedance matching

• A wide range of options which help to increase vacuum system capabilities and implement variety of tasks.

• Adjusting the distance between the ICP and the substrate

Additional options:

• Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber

• Scrubber for the exhaust cleaning

• Gas cabinets for the toxic, flammable and explosive gases

• Thermostat

• Systems of heating the walls of technological vacuum chamber and pipes

• Additional external pumping circuit for achieving an extremely clean deposition process

• Additional gas lines

• Nitrogen (N2) chamber filling system

Technical data:

Additional features:

• Liquid reactive chemicals supplying System

• Electrostatic clamping of the substrate

• Substrate holder design with RF bias, which allows the energy spectrum of the plasma to be adjusted.

• Optical emission spectroscopy

• Integration into clean room

• Substrate thermal stabilization system with helium (He) supply under the bottom of the substrate