System for reactive ion etching with activation by capacitively coupled plasma (CCP)

Features:

• The etching process is a dry process

• High selectiveness of the etching process

• Low temperature of the process

• Possibility to etch substrates with complicated shape

• A wide range of etching materials

• Fully automatic system of CCP impedance matching

• A wide range of options which help to increase vacuum system capabilities and implement variety of tasks in of etching.

Additional options:

• Load-lock vacuum chamber with the mechanism of automatic substrates loading to the technological vacuum chamber

• Scrubber for the exhaust cleaning

• Gas cabinets for the toxic, flammable and explosive gases

• Thermostat

• Systems of heating the walls of technological vacuum chamber and pipes

• Cryogenic substrate cooling system

• Additional gas lines

• Nitrogen (N2) chamber filling system

Technical data:

Additional features:

• System of supplying liquid reactive chemicals

• Electrostatic fixation of substrates

• System of the substrate thermostabilizing with helium (He) supply to the bottom side of the substrate

• Substrate holder design with high-frequency bias supply, which allows to adjust the energy spectrum of the plasma

• Single wave or broadband optical monitoring system

• Optical emission spectroscopy

• Laser interferometry

• Installation into clean room